速度過沖

速度過沖是半導體電子元件中的現象，是指半導體裡的載流子在各極之間的轉換時間小於發射一個光學聲子所需時間^[1]^[2]。因此其速度會超過飽和電子速率（英語：Velocity saturation）（最快會到飽和電子速率的三倍），會造成較快的場效應管或雙極性晶體管切換。若一般的場效應管其閘極寬度小於100 nm時，此特性會很明顯^[3]。

ballistic collection transistor

此元件刻意造成速度過沖，並因此提昇其特性，因此稱為ballistic collection transistor（英語：ballistic collection transistor）^[4]。

參考資料

^ Jyegal, Jang. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length. AIP Advances. June 2015, 5 (6): 067118. Bibcode:2015AIPA....5f7118J. doi:10.1063/1.4922332 .
^ Tan, Michael Loong Peng; Arora, Vijay K.; Saad, Ismail; Ahmadi, Mohammad Taghi; Razali, Ismail. The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. May 2009, 105 (7): 074503–074503–7 [9 March 2018]. Bibcode:2009JAP...105g4503T. doi:10.1063/1.3091278 .
^ SINITSKY, D.; ASSADERAGHI, F.; ORSHANSKY, M.; BOKOR, J.; HU, C. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS. Solid-State Electronics. 1997, 41 (8): 1119–1125. Bibcode:1997SSEle..41.1119S. CiteSeerX 10.1.1.133.2927 . doi:10.1016/S0038-1101(97)00031-2.
^ Chang, M F; Ishibashi, T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. 1996: 126–129. ISBN 978-981-02-2097-6.

Peter Graf: Entwicklung eines Monte-Carlo-Bauelementsimulators für Si / SiGe-Heterobipolartransistoren. Herbert Utz Verlag 1999, ISBN 978-3896755742, S. 79 ff.

這是一篇物理學小作品。您可以透過編輯或修訂擴充其內容。

[1] Jyegal, Jang. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length. AIP Advances. June 2015, 5 (6): 067118. Bibcode:2015AIPA....5f7118J. doi:10.1063/1.4922332 .

[2] Tan, Michael Loong Peng; Arora, Vijay K.; Saad, Ismail; Ahmadi, Mohammad Taghi; Razali, Ismail. The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. May 2009, 105 (7): 074503–074503–7 [9 March 2018]. Bibcode:2009JAP...105g4503T. doi:10.1063/1.3091278 .

[3] SINITSKY, D.; ASSADERAGHI, F.; ORSHANSKY, M.; BOKOR, J.; HU, C. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS. Solid-State Electronics. 1997, 41 (8): 1119–1125. Bibcode:1997SSEle..41.1119S. CiteSeerX 10.1.1.133.2927 . doi:10.1016/S0038-1101(97)00031-2.

[4] Chang, M F; Ishibashi, T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. 1996: 126–129. ISBN 978-981-02-2097-6.

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ballistic collection transistor

相關條目

參考資料